| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
onsemi |
| Series |
- |
| Packaging |
Tape & Box (TB) |
| RoHS Status |
|
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
1.5 A |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) |
200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 1A, 5V |
| Power - Max |
625 mW |
| Frequency - Transition |
200MHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
2N7052 |
| Grade |
- |
| Qualification |
- |