| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
160 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) |
1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 200mA, 5V |
| Power - Max |
900 mW |
| Frequency - Transition |
50MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Long Body |
| Supplier Device Package |
TO-92L |
| Base Product Number |
2SA1013 |
| Grade |
- |
| Qualification |
- |