| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) |
10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 1A, 2V |
| Power - Max |
900 mW |
| Frequency - Transition |
100MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Long Body |
| Supplier Device Package |
TO-92MOD |
| Base Product Number |
2SD2206 |
| Grade |
- |
| Qualification |
- |