| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
NEC Corporation |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
RoHS non-compliant |
| Transistor Type |
PNP - Pre-Biased |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Resistor - Base (R1) |
4.7 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| Frequency - Transition |
- |
| Power - Max |
250 mW |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92 |
| Base Product Number |
- |
| Grade |
- |
| Qualification |
- |