| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Infineon Technologies |
| Series |
HEXFET® |
| Packaging |
Bulk |
| RoHS Status |
|
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
55 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
- |
| Rds On (Max) @ Id, Vgs |
7.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Vgs (Max) |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
2840 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
140W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-262 |
| Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
| Base Product Number |
- |
| Gate Charge (Qg) (Max) @ Vgs |
95 nC @ 10 V |
| Grade |
- |
| Qualification |
- |