| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
International Rectifier |
| Series |
HEXFET® |
| Packaging |
Bulk |
| RoHS Status |
|
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
55 V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
8mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Vgs (Max) |
±16V |
| Input Capacitance (Ciss) (Max) @ Vds |
2880 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
130W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK |
| Package / Case |
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number |
- |
| Gate Charge (Qg) (Max) @ Vgs |
60 nC @ 5 V |
| Grade |
- |
| Qualification |
- |