| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
NXP Semiconductors |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
30 V |
| Vce Saturation (Max) @ Ib, Ic |
650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) |
15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
220 @ 2mA, 5V |
| Power - Max |
250 mW |
| Frequency - Transition |
100MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
TO-236AB |
| Base Product Number |
- |
| Grade |
Automotive |
| Qualification |
AEC-Q101 |