| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
GeneSiC Semiconductor |
| Series |
- |
| Packaging |
Tube |
| RoHS Status |
RoHS Compliant |
| FET Type |
- |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
- |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs(th) (Max) @ Id |
- |
| Vgs (Max) |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
106W (Tc) |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-263-7 |
| Package / Case |
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number |
GA05JT12 |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Grade |
- |
| Qualification |
- |