| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Infineon Technologies |
| Series |
CoolSiC™ Gen 2 |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
107A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
15V, 18V |
| Rds On (Max) @ Id, Vgs |
17.1mOhm @ 40.4A, 18V |
| Vgs(th) (Max) @ Id |
5.1V @ 12.7mA |
| Vgs (Max) |
+23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2910 pF @ 800 V |
| FET Feature |
- |
| Power Dissipation (Max) |
470W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO263-7-12 |
| Package / Case |
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number |
IMBG120R017 |
| Gate Charge (Qg) (Max) @ Vgs |
89 nC @ 18 V |
| Grade |
- |
| Qualification |
- |