| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Infineon Technologies |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
ROHS3 Compliant |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 P-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
2.3A |
| Rds On (Max) @ Id, Vgs |
250mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 15V |
| Power - Max |
2W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Base Product Number |
IRF71 |
| Grade |
- |
| Qualification |
- |