| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Infineon Technologies |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| RoHS Status |
ROHS3 Compliant |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
10A (Ta), 12A (Ta) |
| Rds On (Max) @ Id, Vgs |
13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id |
2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V, 23nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 10V, 1860pF @ 10V |
| Power - Max |
2W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SOIC |
| Base Product Number |
IRF99 |
| Grade |
- |
| Qualification |
- |