| Category |
Discrete Semiconductor Products - Transistors - JFETs |
| Manufacturer |
NXP USA Inc. |
| Series |
- |
| Packaging |
Tape & Box (TB) |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Voltage - Breakdown (V(BR)GSS) |
25 V |
| Drain to Source Voltage (Vdss) |
25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
10 mA @ 5 V |
| Voltage - Cutoff (VGS off) @ Id |
4 V @ 1 µA |
| Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 0V |
| Power - Max |
400 mW |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
J110 |
| Resistance - RDS(On) |
18 Ohms |
| Current Drain (Id) - Max |
- |
| Grade |
- |
| Qualification |
- |