| Category | Discrete Semiconductor Products - Transistors - FETs-MOSFETs | 
						
							| Manufacturer | PN Junction Semiconductor | 
						
							| Series | P3M | 
						
							| Packaging | Tape & Reel (TR) | 
						
							| RoHS Status | ROHS3 Compliant | 
                    							
							| FET Type | N-Channel | 
                                                						
							| Technology | SiCFET (Silicon Carbide) | 
                                                						
							| Drain to Source Voltage (Vdss) | 650 V | 
                                                						
							| Current - Continuous Drain (Id) @ 25°C | 44A | 
                                                						
							| Drive Voltage (Max Rds On, Min Rds On) | 15V | 
                                                						
							| Rds On (Max) @ Id, Vgs | 79mOhm @ 20A, 15V | 
                                                						
							| Vgs(th) (Max) @ Id | 2.2V @ 20mA (Typ) | 
                                                						
							| Vgs (Max) | +20V, -8V | 
                                                						
							| Input Capacitance (Ciss) (Max) @ Vds | - | 
                                                						
							| FET Feature | - | 
                                                						
							| Power Dissipation (Max) | 159W | 
                                                						
							| Operating Temperature | -55°C ~ 175°C (TJ) | 
                                                						
							| Mounting Type | Surface Mount | 
                                                						
							| Supplier Device Package | D2PAK-7 | 
                                                						
							| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | 
                                                						
							| Base Product Number | - | 
                                                						
							| Gate Charge (Qg) (Max) @ Vgs | - | 
                                                						
							| Grade | - | 
                                                						
							| Qualification | - |