| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
NXP USA Inc. |
| Series |
- |
| Packaging |
Tape & Box (TB) |
| RoHS Status |
ROHS3 Compliant |
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
40 V |
| Vce Saturation (Max) @ Ib, Ic |
500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) |
100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
300 @ 100mA, 5V |
| Power - Max |
830 mW |
| Frequency - Transition |
150MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
PBSS5 |
| Grade |
- |
| Qualification |
- |