Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
WeEn Semiconductors |
Series |
- |
Packaging |
Tube |
RoHS Status |
|
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
4 A |
Voltage - Collector Emitter Breakdown (Max) |
400 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 1A, 4A |
Current - Collector Cutoff (Max) |
100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
10 @ 2A, 5V |
Power - Max |
26 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package |
TO-220F |
Base Product Number |
PHE13 |
Grade |
- |
Qualification |
- |