| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
NXP Semiconductors |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
2 NPN - Pre-Biased |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
10kOhms |
| Resistor - Emitter Base (R2) |
47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
1µA |
| Frequency - Transition |
230MHz |
| Power - Max |
230mW |
| Mounting Type |
Surface Mount |
| Package / Case |
6-XFDFN Exposed Pad |
| Supplier Device Package |
DFN1010B-6 |
| Base Product Number |
PQMH9 |
| Grade |
Automotive |
| Qualification |
AEC-Q101 |