Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
NXP Semiconductors |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
Transistor Type |
2 NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
10kOhms |
Resistor - Emitter Base (R2) |
47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
1µA |
Frequency - Transition |
230MHz |
Power - Max |
230mW |
Mounting Type |
Surface Mount |
Package / Case |
6-XFDFN Exposed Pad |
Supplier Device Package |
DFN1010B-6 |
Base Product Number |
PQMH9 |
Grade |
Automotive |
Qualification |
AEC-Q101 |