Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
|
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
47 kOhms |
Resistor - Emitter Base (R2) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Frequency - Transition |
250 MHz |
Power - Max |
100 mW |
Mounting Type |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
Supplier Device Package |
SSM |
Base Product Number |
RN1113 |
Grade |
Automotive |
Qualification |
AEC-Q101 |