Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
RoHS Compliant |
Transistor Type |
PNP - Pre-Biased |
Current - Collector (Ic) (Max) |
800 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
1 kOhms |
Resistor - Emitter Base (R2) |
1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 2mA, 50mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
200 MHz |
Power - Max |
200 mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
S-Mini |
Base Product Number |
RN2421 |
Grade |
- |
Qualification |
- |