| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
ROHS3 Compliant |
| Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
22kOhms |
| Resistor - Emitter Base (R2) |
22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| Frequency - Transition |
250MHz |
| Power - Max |
100mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
ES6 |
| Base Product Number |
RN4983 |
| Grade |
- |
| Qualification |
- |