| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
SMC Diode Solutions |
| Series |
- |
| Packaging |
Tube |
| RoHS Status |
|
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
70A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Rds On (Max) @ Id, Vgs |
34mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id |
4V @ 15mA |
| Vgs (Max) |
+25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4150 pF @ 1000 V |
| FET Feature |
- |
| Power Dissipation (Max) |
311W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-263-7 |
| Package / Case |
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number |
- |
| Gate Charge (Qg) (Max) @ Vgs |
177 nC @ 20 V |
| Grade |
- |
| Qualification |
- |