| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
ROHS3 Compliant |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
N and P-Channel |
| FET Feature |
Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
1.6A (Ta), 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs |
122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id |
2.6V @ 1mA, 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V, 2.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 15V, 120pF @ 15V |
| Power - Max |
500mW (Ta) |
| Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Package / Case |
6-SMD, Flat Leads |
| Supplier Device Package |
UF6 |
| Base Product Number |
SSM6L40 |
| Grade |
- |
| Qualification |
- |