| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
ROHS3 Compliant |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 P-Channel (Dual) |
| FET Feature |
Logic Level Gate, 1.8V Drive |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
4A (Ta) |
| Rds On (Max) @ Id, Vgs |
45mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
6.74nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 10V |
| Power - Max |
1W (Ta) |
| Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Supplier Device Package |
6-µDFN (2x2) |
| Base Product Number |
SSM6P69 |
| Grade |
- |
| Qualification |
- |