| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tape & Reel (TR) |
| RoHS Status |
|
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
6A |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 4.8A, 4V |
| Vgs(th) (Max) @ Id |
1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
2010pF @ 10V |
| Power - Max |
450mW |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package |
8-SOP (5.5x6.0) |
| Base Product Number |
TPC8207 |
| Grade |
- |
| Qualification |
- |